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IRFP17N50L 07/18/03 www.irf.com 1 smps mosfet hexfet power mosfet to-247ac features and benefits ?

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v dss r ds(on) typ. trr typ. i d 500v 0.28 ? 170ns 16a absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 16 i d @ t c = 100c continuous drain current, v gs @ 10v 11 a i dm pulsed drain current 64 p d @t c = 25c power dissipation 220 w linear derating factor 1.8 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 13 v/ns t j operating junction and -55 to + 150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case ) mounting torque, 6-32 or m3 screw diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 16 mosfet symbol (body diode) a showing the i sm pulsed source current ??? ??? 64 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 16a, v gs = 0v t rr reverse recovery time ??? 170 250 ns t j = 25c, i f = 16a ??? 220 330 t j = 125c, di/dt = 100a/s q rr reverse recovery charge ??? 470 710 nc t j = 25c, i s = 16a, v gs = 0v ??? 810 1210 t j = 125c, di/dt = 100a/s i rrm reverse recovery current ??? 7.3 11 a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) 10lb in (1.1n m) pd - 94322a

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l = 3.0mh, r g = 25 ? , i as = 16a. (see figure 12). i sd = 16a, di/dt 347a/s, v dd v (br)dss , t j 150c. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff.(er) is a fixed capacitance that stores the same energy as c oss while v ds is rising from 0 to 80% v dss . static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 500 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.60 ??? v/c r ds(on) static drain-to-source on-resistance ??? 0.28 0.32 ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v i dss drain-to-source leakage current ??? ??? 50 a ??? ??? 2.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 1.4 ??? ? dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 11 ??? ??? s q g total gate charge ??? ??? 130 q gs gate-to-source charge ??? ??? 33 nc q gd gate-to-drain ("miller") charge ??? ??? 59 t d(on) turn-on delay time ??? 21 ??? t r rise time ??? 51 ??? ns t d(off) turn-off delay time ??? 50 ??? t f fall time ??? 28 ??? c iss input capacitance ??? 2760 ??? c oss output capacitance ??? 325 ??? c rss reverse transfer capacitance ??? 37 ??? c oss output capacitance ??? 3690 ??? pf v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 84 ??? v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance ??? 159 ??? c oss eff. (er) effective output capacitance ??? 120 ??? (energy related) avalanche characteristics symbol parameter typ. units e as si n gl e p u l se a va l anc h e e ner g y ??? mj i ar avalanche current ??? a e ar r epet i t i ve a va l anc h e e ner g y ??? mj thermal resistance symbol parameter typ. units r jc junction-to-case ??? r cs case-to-sink, flat, greased surface 0.50 c/w r ja junction-to-ambient ??? 62 max. 0.56 ??? v ds = 25v ? = 1.0mhz, see fig. 5 16 22 max. 390 v gs = 0v,v ds = 0v to 400v i d = 16a r g = 7.5 ? v gs = 10v, see fig. 14a & 14b v gs = 0v i d = 16a v ds = 400v v gs = 10v, see fig. 7 & 15 v dd = 250v v gs = 30v f = 1mhz, open drain conditions v ds = 50v, i d = 9.9a v gs = -30v v ds = v gs , i d = 250a v ds = 500v, v gs = 0v v ds = 400v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 9.9a

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 16a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 150c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v

4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd fig 8. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.6 0.9 1.3 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j fig 7. typical gate charge vs. gate-to-source voltage 0 30 60 90 120 150 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 16a v = 100v ds v = 250v ds v = 400v ds fig 6. typ. output capacitance stored energy vs. v ds 0 100 200 300 400 500 600 v ds, drain-to-source voltage (v) 0 5 10 15 20 e n e r g y ( j )

www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

6 www.irf.com fig 14a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 14b. unclamped inductive waveforms t p v (br)dss i as d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15a. gate charge test circuit q g q gs q gd v g charge fig 15b. basic gate charge waveform fig 13. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 160 320 480 640 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 7a 10a 16a fig 12. maximum safe operating area 0.1 1 10 100 1000 10 100 1000 10000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms

www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 16. for n-channel hexfet power mosfets

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8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/03

lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d mm b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain notes : t his part marking information applies to devices produced after 02/26/2001 example: as s e mb le d on ww 35, 2000 lot code 5657 wit h as s e mb l y this is an irfpe30 in the assembly line "h" 035h logo int e rnat ional rectifier irf pe30 lot code as s e mb l y 56 57 part number dat e code year 0 = 2000 week 35 line h lot code ww = we e k yy = year notes : this part markin g information applies to devices produced before 02/26/2001 or for example: this is an irfpe30 with assembly lot code 3a1q assembly logo rect if ier i nt e r nat i onal 3a1q irfpe30 part number (yyww) dat e code 9302 parts manufactured i n gb . to-247ac package is not recommended for surface mount application.

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